Cold wall plasma enhanced chemical vapor deposition equipment
Used for the growth of single-layer graphene films, compound films, single-walled and multi walled carbon nanotube arrays, and other thin film materials at the wafer level.
characteristic:
· Supports up to 6-inch wafers
· High temperature heating function, up to 1200 ℃
· Water cooled multi-channel gas vertical spray system
· Cold wall structure design, circulating water cooling system (5 ℃ -50 ℃)
· Heating base speed 0-300 revolutions per minute
· Infrared temperature measurement range 500~1300 ℃
· PC Computer Fully Automatic Control System
· 13.56MHz, 0-1KW RF plasma source
· Provide multiple MO sources, gas sources, solid sources, and liquid sources
Equipment schematic diagram
