ABOUT

Suzhou Yuanchen Semiconductor Co., Ltd. (referred to as "Yuanchen Semiconductor") was established on March 18, 2024, with its registered address located in Suzhou Industrial Park and a registered capital of 10 million RMB. Yuanchen Semiconductor has a shareholder and technical background as a Nobel Prize winner in Physics and a recipient of the National Major Program. It is committed to developing semiconductor equipment for single atom precision thin film material growth, transfer, and other processes, aiming to become the industry leader and technology leader in thin film material semiconductor equipment in China.

The chief scientist of Yuanchen Semiconductor is a Nobel Prize winner and possesses core technologies in the growth and processing of two-dimensional materials. Yuanchen Semiconductor holds two authorized invention patents: an electrical testing monitoring feedback chemical vapor deposition system and its application, a high-quality two-dimensional material growth device, and four authorized utility model patents: the right to use static mixers for two-dimensional material growth equipment, a silicon wafer reaction transfer device for vertical growth of two-dimensional materials, a two-dimensional material chemical deposition cooling system, and a left-right symmetrical CVD system. Master the core technologies for the preparation and processing of multiple thin film semiconductor materials, including large-area CVD growth process of graphene and CVD growth process of transition metal sulfides. We provide equipment products such as tubular CVD, plasma enhanced CVD, metal organic compound CVD, and various types of thin film material transfer systems. We can also customize and collaborate on research and development as needed. We have established friendly cooperation with universities and enterprises such as Peking University, Zhejiang University, Xiamen University, Tianjin University, National University of Defense Technology, Beijing Graphene Research Institute, and Aolei Technology.