PECVD
Used for wafer level thin film growth, coating, and other plasma treatment processes.
characteristic:
· Support experiments on 6, 8, and 12 inch wafers and fragmented samples
· Graphite disk heating, not lower than 400 ℃
· Microwave 0.5-10kW, 13.56MHz, 0-1KW RF power supply, DC pulse (800V, 0-1KW, etc.) optional plasma source
· PC Computer Fully Automatic Control System
· Multi channel working gas H2/CH4/N2/Ar/O2, etc
· The ultimate vacuum degree is better than 10-3Pa