MOCVD
Used for growth regulation of two-dimensional materials, carbon nanotube deposition, nitride thin films, nitride nanostructures, and atomic layer thickness deposition of wide bandgap semiconductor materials, integrated reaction chambers, gas transport systems, vacuum systems, glove boxes, gas cabinets, control systems, etc.
characteristic:
· Multi layer sprinkler structure
· 2-8 expandable organic gas source bubbling pipelines with independent heating function
· Maximum 1200 ℃ biased rotating base
· Infrared temperature measurement range 500~1300 ℃
· Heating base speed 0-300 revolutions per minute
· Extreme vacuum below 10-4mTorr
· Provide multiple MO sources, gas sources, solid sources, and liquid sources
· Can hold 1 4/6-inch graphite tray
· Glove box water oxygen content ≤ 1ppm